Polymer Cleaning From Porous Low-k Dielectrics in He/H2 Plasmas
نویسندگان
چکیده
Porous dielectrics such as SiCOH are used as the insulator in interconnect wiring in microelectronics devices to lower the dielectric constant and therefore decrease the resistive–capacitive delay. After etching a trench in low-k dielectrics in fluorocarbon plasmas, a CFx polymer remains on the sidewalls, which must be removed in a manner that does not damage the low-k material. This can be accomplished using He/H2 plasmas, which produce hot H atoms (i.e., energy > 1 eV). We present images of the distributions of hot H atoms and H ions from an inductively coupled plasma and their resulting cleaning of a trench etched in SiCOH.
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